gallium phosphide造句

"gallium phosphide"是什么意思   

例句与造句

  1. Typical crystal materials are zinc telluride, gallium phosphide, and gallium selenide.
  2. Gallium phosphide has applications in optical systems.
  3. It is often grown on gallium phosphide substrates to form a GaP / GaAsP heterostructure.
  4. At temperatures above ~ 900 癈, gallium phosphide dissociates and the phosphorus escapes as a gas.
  5. Early in his career, Henry identified the source of red light emission in gallium phosphide LEDs.
  6. It's difficult to find gallium phosphide in a sentence. 用gallium phosphide造句挺难的
  7. These use a combination of several layers of gallium arsenide, indium gallium phosphide, and germanium to capture more energy from the solar spectrum.
  8. The device was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, and emitted infrared photons from the base layer.
  9. Alloys of Indium gallium phosphide in the range In . 5 Ga . 5 P through In . 53 Ga . 47 P serve as the high band gap alloy.
  10. Triple junction cells consisting of indium gallium phosphide ( InGaP ), gallium arsenide ( GaAs ) or indium gallium arsenide ( InGaAs ) and germanium ( Ge ) can be fabricated on germanium wafers.
  11. The electrons dissipate energy in the form of heat for silicon and germanium diodes but in gallium arsenide phosphide ( GaAsP ) and gallium phosphide ( GaP ) semiconductors, the electrons dissipate energy by emitting photons.
  12. As with a light emitting transistor, the transistor laser was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, but emitted a coherent beam by stimulated emission, which differed from their previous device that only emitted incoherent photons.
  13. The device was initially constructed out of layers of indium gallium phosphide, gallium arsenide, and indium gallium arsenide, which prevented the device from running without being cooled with liquid nitrogen . and continuous wave operation ( continuously emitting light ) at 3 GHz.
  14. Later, dual-and triple-junction solar cells based on GaAs with germanium and indium gallium phosphide layers were developed as the basis of a triple-junction solar cell, which held a record efficiency of over 32 % and can operate also with light as concentrated as 2, 000 suns.

相关词汇

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